the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk3109 switching n-channel power mos fet data sheet document no. d13332ej3v0ds00 (3rd edition) date published march 2004 ns cp(k) printed in japan 1998, 2000 the mark ? shows major revised points. description the 2sk3109 is n-channel mos fet device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as dc/dc converter. features ? gate voltage rating 30 v ? low on-state resistance r ds(on) = 0.4 ? max. (v gs = 10 v, i d = 5.0 a) ? low input capacitance c iss = 400 pf typ. (v ds = 10 v, v gs = 0 v) ? avalanche capability rated ? built-in gate protection diode ? surface mount device available absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 200 v gate to source voltage (v ds = 0 v) v gss 30 v drain current (dc) (t c = 25c) i d(dc) 10 a drain current (pulse) note1 i d(pulse) 30 a total power dissipation (t a = 25c) p t1 1.5 w total power dissipation (t c = 25c) p t2 50 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current note2 i as 10 a single avalanche energy note2 e as 35 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 100 v, r g = 25 ? , v gs = 20 0 v ordering information part number package 2sk3109 to-220ab (mp-25) 2sk3109-s to-262 (mp-25 fin cut) 2SK3109-Zj to-263 (mp-25zj)
data sheet d13332ej3v0ds 2 2sk3109 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 200 v, v gs = 0 v 100 a gate leakage current i gss v gs = 30 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 4.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 5.0 a 1.5 s drain to source on-state resistance note r ds(on) v gs = 10 v, i d = 5.0 a 0.32 0.4 ? input capacitance c iss v ds = 10 v, 400 pf output capacitance c oss v gs = 0 v, 110 pf reverse transfer capacitance c rss f = 1 mhz 55 pf turn-on delay time t d(on) v dd = 100 v, i d = 5.0 a, 12 ns rise time t r v gs = 10 v, 34 ns turn-off delay time t d(off) r g = 10 ? 40 ns fall time t f 20 ns total gate charge q g v dd = 160 v, 18 nc gate to source charge q gs v gs = 10 v, 3.5 nc gate to drain charge q gd i d = 10 a 10 nc body diode forward voltage note v f(s-d) i f = 10 a, v gs = 0 v 1.0 v reverse recovery time t rr i f = 10 a, v gs = 0 v, 250 ns reverse recovery charge q rr di/dt = 50 a/ s 1.0 c note pulsed test circuit 1 avalanche capability r g = 25 ? 50 ? pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma ?
data sheet d13332ej3v0ds 3 2sk3109 typical characteristics (t a = 25c) drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 10 20 30 25 5 0 pulsed 10 15 20 30 35 0 v gs = 10 v v gs = 30 v 40 50 0.01 0 0.1 1 10 412 0.001 100 v ds = 10 v pulsed forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 816 t ch = 125 ?c 75 ?c 25 ?c ? 25 ?c gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma ? 50 0 150 50 2.0 2.5 100 3.0 3.5 4.0 4.5 5.0 forward transfer admittance vs. drain current |y fs | - forward transfer admittance - s i d - drain current - a 1 1 10 10 100 v ds = 10 v pulsed t ch = ? 25 ?c 25?c 75?c 125?c 0.01 0.1 0.01 0.1 pulsed drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - ? 08 0.1 10 16 0.3 0.2 0.4 0.5 0 20 246 1214 18 0.6 0.7 0.8 0.9 1.0 i d = 10 a 5 a 2 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - ? 1.2 0.8 0.6 0.2 10 100 0.1 0 1 pulsed v gs = 10 v 0.4 1.0 1.4 v gs = 30 v
data sheet d13332ej3v0ds 4 2sk3109 drain to source on-state resistance vs. channel temperature 50 150 r ds (on) - drain to source on-state resistance - ? 0.4 0 0 100 ? 50 t ch - channel temperature - ?c 0.6 0.2 v gs = 10 v pulsed i d = 5 a 0.8 1.0 1.2 i d = 10 a source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 0.0 0.1 1 10 0.5 1.0 1.5 100 v gs = 10 v 0 v pulsed 2.0 capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 0.1 100 1000 1 10 100 v gs = 0 v f = 1 mhz c iss c oss c rss 10 10000 1000 switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 10 100 1000 1 10 100 v dd = 100 v v gs = 10 v r g = 10 ? t d(off) t d(on) t r t f reverse recovery time vs. drain current i d - drain current - a t rr - reverse recovery time - ns 0.1 10 1 10 100 100 di/dt = 50 a/ s v gs = 0 v 1 1000 v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 5 10 15 20 50 100 150 200 2 4 6 8 0 10 12 14 16 0 v gs v ds i d = 10 a v dd = 160 v 100 v 40 v
data sheet d13332ej3v0ds 5 2sk3109 derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 0 total power dissipation vs. case temperature t c - case temperature - ?c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 70 60 50 40 30 20 10 0 forward bias safe operating area 10 100 1000 i d - drain current - a 1 v ds - drain to source voltage - v 100 10 1 0.01 r ds(on) limited i d(pulse) i d(dc) t c = 25 ?c single pulse 0.1 pw = 10 s 100 s 1 ms 3 ms 10 ms power dissipation limited transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c/w 1 0.01 0.1 10 100 1 m 10 m 100 m 1 10 1000 100 100 single pulse 10 ? r th(ch-a) = 83.3 ?c/w r th(ch-c) = 2.5 ?c/w
data sheet d13332ej3v0ds 6 2sk3109 0.01 10 0.1 1 10 100 v dd = 100 v v gs = 20 0 v r g = 25 ? starting t ch = 25?c 1 single avalanche current vs. inductive load l - inductive load - mh i as - single avalanche current - a i as = 10 a e as = 35 mj single avalanche energy derating factor 75 150 125 80 40 0 starting t ch - starting channel temperature - ?c energy derating factor - % 50 100 25 100 60 20 v dd = 100 v r g = 25 ? v gs = 20 0 v i as 10 a
data sheet d13332ej3v0ds 7 2sk3109 package drawings (unit: mm) 1) to-220ab (mp-25) 2) to-262 (mp-25 fin cut) 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.6?.2 4 3.0?.3 1.3?.2 0.75?.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.3?.2 0.5?.2 2.8?.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.3?.2 0.75?.3 2.54 typ. 2.54 typ. 8.5 0.2 12.7 min. 1.3?.2 0.5?.2 2.8?.2 1.0?.5 4 3) to-263 (mp-25zj) 1.4?.2 1.0?.5 2.54 typ. 2.54 typ. 8.5?.2 123 5.7?.4 4 4.8 max. 1.3?.2 0.5?.2 1.gate 2.drain 3.source 4.fin (drain) 0.7?.2 10 typ. 0.5r typ. 0.8r typ. 2.8?.2 equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ?
2sk3109 the information in this document is current as of march, 2004. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
|
